In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 7A ( 1994-07-01), p. L927-
Abstract:
We grew epitaxial CeO 2 films on (1̄012) sapphire by halide source plasma enhanced chemical vapor deposition (halide-PECVD) using CeBr 3 and O 2 as source materials. We obtained amorphous films at substrate temperatures of 620° C, polycrystalline films at 680° C, and highly aligned films at 720°C. X-ray diffraction patterns show that (001) CeO 2 is parallel to (1̄012) sapphire, and electron channeling patterns show [110] CeO 2 aligned with [22̄01] sapphire. AFM shows very smooth films with a maximum variation of ± 2 nm. We grew YBCO film on CeO 2 /sapphire with a T c of 83 K.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L927
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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