Note: Intro -- Preface to the Second Edition -- Preface to the First Edition -- Contents -- About the Author -- Symbols -- 1 Basics and Theory -- 1.1 Basics of Optical Absorption -- 1.1.1 Photons and Their Properties -- 1.1.2 Optical Absorption of Important Semiconductor Materials -- 1.1.3 Photogeneration -- 1.2 Semiconductor Equations -- 1.3 Important Models for Photodetectors -- 1.3.1 Carrier Drift -- 1.3.2 Carrier Diffusion -- 1.3.3 Quantum Efficiency and Responsivity -- 1.3.4 Equivalent Circuit of a Photodiode -- References -- 2 Integrated Silicon Photodetectors -- 2.1 Integrated Detectors in Bipolar Technology -- 2.1.1 Bipolar Processes -- 2.1.2 Integrated Detectors in Standard Bipolar Technology -- 2.1.3 Integrated Detectors in Modified Bipolar Technology -- 2.2 CMOS-Integrated Photodetectors -- 2.2.1 One-Well CMOS Processes -- 2.2.2 Twin-Well CMOS Processes -- 2.2.3 Triple-Well CMOS Processes -- 2.2.4 Integrated Detectors in Standard CMOS Processes -- 2.2.5 Spatially-Modulated-Light Detector -- 2.2.6 PIN Photodiode -- 2.2.7 Charge-Coupled-Device Image Sensors -- 2.2.8 Active-Pixel Sensors -- 2.2.9 Amorphous-Silicon Detectors -- 2.2.10 CMOS-Integrated Bipolar Phototransistors -- 2.2.11 Photonic Mixer Device -- 2.2.12 Avalanche Photodiodes -- 2.2.13 Single-Photon Avalanche Diodes -- 2.3 BiCMOS-Integrated Detectors -- 2.3.1 BiCMOS Processes -- 2.3.2 BiCMOS-Integrated Photodiodes -- References -- 3 Detectors in Thin Crystalline Silicon Films -- 3.1 Photodiodes in Silicon-on-Insulator -- 3.2 Silicon on Sapphire -- 3.3 Polyimide Bonding -- References -- 4 SiGe Photodetectors -- 4.1 Heteroepitaxial Growth -- 4.2 Absorption Coefficient of SiGe Alloys -- 4.3 SiGe/Si PIN Hetero-Bipolar-Transistor Integration -- References -- 5 Design of Integrated Optical Receiver Circuits -- 5.1 Circuit Simulators and Transistor Models. , 5.2 Layout and Verification Tools -- 5.3 Design of OEICs -- 5.4 Transimpedance Amplifier -- 5.4.1 Frequency Response -- 5.4.2 Phase and Group Delay -- 5.4.3 Stability and Compensation -- 5.4.4 Bandwidth of Transistor Transimpedance Amplifier Circuit -- 5.4.5 Bandwidth Limit of Integrated Transimpedance Amplifiers -- 5.4.6 New π-Model for Integrated Transimpedance Amplifier -- 5.4.7 Shunt-Shunt Feedback -- 5.4.8 Input and Output Resistance -- 5.4.9 Noise and Sensitivity -- 5.4.10 Poisson Statistics and Quantum Limit -- References -- 6 Examples of Optoelectronic Integrated Circuits -- 6.1 Digital CMOS Circuits -- 6.1.1 Synchronous Circuits -- 6.1.2 Asynchronous Circuits -- 6.2 Digital BiCMOS Circuits -- 6.3 Laser Driver Circuits -- 6.4 Analog Circuits -- 6.4.1 Bipolar Circuits -- 6.4.2 Two-Dimensional CMOS Imagers -- 6.4.3 Optical Distance Measurement Circuits -- 6.4.4 3D Sensors with Photodiodes in Standard CMOS -- 6.4.5 3D Sensors with PIN Photodiodes -- 6.4.6 3D Sensors with SPADs -- 6.4.7 Smart Pixel Sensors -- 6.4.8 CMOS Optical Sensors -- 6.4.9 BiCMOS Optical Sensors -- 6.4.10 Sensors Using Single-Photon Detection -- 6.4.11 CMOS Circuits for Optical Storage Systems -- 6.4.12 BiCMOS Circuits for Optical Storage Systems -- 6.4.13 Continuous-Mode Fiber Receivers -- 6.4.14 Receiver for Wireless Infrared Communication -- 6.4.15 OWC Receivers and Experiments with Visible Light -- 6.4.16 Hybrid Receivers -- 6.4.17 Speed Enhancement Techniques -- 6.4.18 Plastic-Optical-Fiber Receivers -- 6.4.19 Burst-Mode Optical Receivers -- 6.4.20 Deep-Sub-m Receivers -- 6.4.21 Receivers Aiming Towards the Quantum Limit -- 6.4.22 Comparison of Fiber Receivers -- 6.4.23 Special Circuits -- 6.5 Summary -- References -- 7 Circuits for Electronic-Photonic Integration -- 7.1 3D-Integration Technologies -- 7.1.1 Copper Pillar Connection -- 7.1.2 Through Oxide Vias. , 7.1.3 Through Silicon Vias -- 7.2 Optical Switch -- 7.3 Optical Transceiver -- 7.4 Sensor for Optical Tomography -- 7.5 Sensor for 3D Microimaging -- References -- Index.