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  • American Vacuum Society  (14)
  • Physics  (14)
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  • American Vacuum Society  (14)
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  • Physics  (14)
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  • 1
    Online Resource
    Online Resource
    Characterization and photoluminescence of Co-doped SiC films
    American Vacuum Society ; 2013
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 31, No. 6 ( 2013-11-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 31, No. 6 ( 2013-11-01)
    Abstract: Co-doped SiC films are fabricated on Si (100) substrates by radio frequency magnetron sputtering, and the crystal structure, composition, element valences, local structure, and photoluminescence of the films are studied. Crystal structure analysis identifies the film structure as 3C-SiC and shows that the Co dopant atoms form CoSi secondary phase compounds in the films. The composition and element valence analysis show that the Co dopant atoms substituting for C sites in the SiC lattice exist in the form of Co2+ ions, and that C clusters are present in the films, which increase in amount with increasing Co dopant concentration. The analysis of local structure reveals that Co clusters, CoO and Co3O4, are not present in the films, and CoSi secondary phase compounds exist. All of the films show a violet photoluminescence peak located at 413 nm, which becomes stronger with increased Co dopant concentration and annealing temperature, and is found to originate from the C clusters.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4822057
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2013
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 2
    Online Resource
    Online Resource
    Effect of Mn doping on the structural, optical, and magnetic properties of In2O3 films
    American Vacuum Society ; 2013
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 31, No. 6 ( 2013-11-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 31, No. 6 ( 2013-11-01)
    Abstract: (In1−xMnx)2O3 films were grown by radio frequency-magnetron sputtering technique. Effect of Mn doping on the structural, optical, and magnetic properties of films is investigated systematically. The detailed structure analyses suggest that Mn ions substitute for In3+ sites of the In2O3 lattice in the valence of +2 states, and Mn-related secondary phases or clusters as the source of ferromagnetism is safely ruled out. All films show typical room temperature ferromagnetism. The saturation magnetization Ms increases first, and then decreases, while carrier concentration nc decreases monotonically with Mn doping, implying that the ferromagnetism is not directly induced by the mediated carriers. The optical bandgap Eg of films decreases monotonically with the increase of Mn concentration, and there exists a linear functional dependence between Eg and nc2/3, which is consistent with Burstein-Moss shift arguments. It can be concluded that the ferromagnetic order in Mn-doped In2O3 films is intrinsic, arising from Mn atoms substitution for the In sites of In2O3 lattice. The oxygen vacancies play a mediation role on the ferromagnetic couplings between the Mn ions.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4824163
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2013
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 3
    Online Resource
    Online Resource
    Transport and magnetic properties of amorphous SiC/Cu ultrathin multilayer films
    American Vacuum Society ; 2017
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 35, No. 4 ( 2017-07-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 35, No. 4 ( 2017-07-01)
    Abstract: Silicon carbide/copper (SiC/Cu) ultrathin multilayer films were deposited on Si substrates by alternating the use of radio-frequency and direct current magnetron sputtering. It was found that the SiC layers possess an amorphous structure and Cu is incorporated into the SiC layers. The films have a p-type semiconductor characteristic, room-temperature ferromagnetic behavior, and negative magnetoresistance. A carrier concentration of up to 2.12 × 1020 and a saturation magnetization of up to 12.14 emu/cm3 are obtained, and Mott variable range hopping mainly dominates the conduction mechanism of the films. The theoretical fitting for the experimental magnetoresistance curves and the theoretical calculation of the density of states of Cu-doped SiC indicate that the ferromagnetism of the films originates from a carrier-mediated p–d exchange interaction.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4984018
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2017
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 4
    Online Resource
    Online Resource
    Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
    American Vacuum Society ; 2018
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 36, No. 4 ( 2018-07-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 36, No. 4 ( 2018-07-01)
    Abstract: Thermal stability of metal/n-GaN contact is critical for its applications in microelectronic and optoelectronic devices. Metal Ti is generally used to make Ohmic contact on n-GaN after high temperature annealing, and the key factor is to form TiN at the interface. To reduce the processing temperature and improve the reliability, metallic titanium nitride (TiN) thin film has been proposed to substitute traditional metals (such as Ti) in the contact structures, due to its low work function and high blocking effect. For this novel approach, the first step is to fabricate high quality TiN films. Here, the authors adopted remote plasma-enhanced atomic layer deposition method to deposit TiN films under well-controlled conditions. Stoichiometric TiN films (Ti:N ∼ 1:1) with low oxygen contamination ( & lt;5%) have been deposited uniformly on 2 in. substrates in a large temperature range of 250–400 °C. The work function of TiN films is quite low (∼3.7 ± 0.1 eV) compared to metal Ti (∼4.33 eV), and almost independent to the growth temperature and substrates. Strong Fermi edge and high conductivity indicate excellent metallic property of the TiN films. This study of TiN film growth paves the way to establish a low temperature process and improve the thermal stability of Ohmic contacts for wide band gap semiconductor-based devices.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.5025557
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2018
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Investigation of structure, magnetic, and transport properties of Mn-doped SiC films
    American Vacuum Society ; 2013
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 31, No. 4 ( 2013-07-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 31, No. 4 ( 2013-07-01)
    Abstract: Mn-doped SiC films were fabricated by radio frequency magnetron sputtering technique. The structure, composition, and magnetic and transport properties of the films were investigated. The results show the films have the 3C-SiC crystal structure and the doped Mn atoms in the form of Mn2+ ions substitute for C sites in SiC lattice. All the films are ferromagnetic at 300 K, and the ferromagnetism in films arises from the doped Mn atoms and some extended defects. In addition, the saturation magnetization increases with the Mn-doped concentration increasing. The Mn doping does not change the semiconductor characteristics of the SiC films.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4809586
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2013
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 6
    Online Resource
    Online Resource
    Local structure study of (In0.95−xFexCu0.05)2O3 thin films using x-ray absorption spectroscopy
    American Vacuum Society ; 2015
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 33, No. 4 ( 2015-07-01)
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 33, No. 4 ( 2015-07-01)
    Abstract: The (In0.95−xFexCu0.05)2O3 (x = 0.06, 0.08, 0.15, and 0.20) films prepared by RF-magnetron sputtering were investigated by the combination of x-ray absorption spectroscopy (XAS) at Fe, Cu, and O K-edge. Although the Fe and O K-edge XAS spectra show that the Fe atoms substitute for the In sites of In2O3 lattice for all the films, the Cu K-edge XAS spectra reveal that the codoped Cu atoms are separated to form the Cu metal clusters. After being annealed in air, the Fe atoms are still substitutionally incorporated into the In2O3 lattice, while the Cu atoms form the CuO secondary phases. With the increase of Fe concentration, the bond length RFe-O shortens and the Debye–Waller factor σ2Fe-O increases in the first coordination shell of Fe, which are attributed to the relaxation of oxygen environment around the substitutional Fe ions. The forming of Cu relating secondary phases in the films is due to high ionization energy of Cu atoms, leading that the Cu atoms are energetically much harder to be oxidized to substitute for the In sites of In2O3 lattice than Fe atoms. These results provide new experimental guidance in the preparation of the codoped In2O3 based dilute magnetic oxides.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.4922643
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2015
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 7
    Online Resource
    Online Resource
    In situ deposition of YBa2Cu3O7− x superconducting thin film without high pressure oxygen during film cooling*
    American Vacuum Society ; 1994
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 12, No. 2 ( 1994-03-01), p. 533-535
    Details
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 12, No. 2 ( 1994-03-01), p. 533-535
    Abstract: YBa2Cu3O7−x thin films were deposited by excimer laser ablation with three different kinds of film-cooling processes. The films cooled under 300 Torr of oxygen pressure and 200 mTorr of oxygen pressure with dc discharge assistance were superconductive. The zero-resistance temperatures were 86.5 K and critical current densities in zero field at 77 K were more than 106 A/cm2, while the films cooled under 200 mTorr of oxygen pressure were semiconductive.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    URL: Article
    DOI: 10.1116/1.579164
    RVK:
    UA 4921
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1994
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 8
    Online Resource
    Online Resource
    Fabrication of complex nanostructures of Poly(vinylidenefluoride-trifluoroethylene) by dual step hot-embossing
    American Vacuum Society ; 2011
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 29, No. 6 ( 2011-11), p. 06FG08-
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 29, No. 6 ( 2011-11), p. 06FG08-
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.3662087
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2011
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 9
    Online Resource
    Online Resource
    Stability improvement of deuterated amorphous silicon thin-film transistors characterized by modified Schottky-contact gated-four-probe method
    American Vacuum Society ; 2003
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 21, No. 2 ( 2003-03-01), p. 677-682
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 2 ( 2003-03-01), p. 677-682
    Abstract: A modified Schottky-contact gated-four-probe structure was applied to study the stability of the hydrogenated and deuterated amorphous silicon (a-Si:D) thin-film transistors under various bias conditions. It was found that after 10 V bias stress, the density of gap states generated in both the upper and lower part of the mobility gap of deuterated amorphous silicon is two to twenty times less than those of hydrogenated silicon. Besides, less density of states at the lower part of mobility gap of a-Si:D is generated after 20, −10, and −20 V bias stress.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1545752
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2003
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 10
    Online Resource
    Online Resource
    Controllable fabrication of fiber nano-tips by dynamic chemical etching based on siphon principle
    American Vacuum Society ; 2004
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 22, No. 5 ( 2004-09-01), p. 2283-2285
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 5 ( 2004-09-01), p. 2283-2285
    Abstract: A dynamic chemical etching method based on siphon principle has been developed for controllable fabrication of fiber nano-tips, which could be used in near-field optical microscope and optical nanosensors. Compared with traditional static chemical etching, this method has advantages such as reproducibility, controllability, convenience, less cost, and making tip surface smooth. The overall shape and the tape angle of the tip can be effectively controlled through the speed and direction of water flux. Tips with taper angles from 20° to 55°, and tips with double tapers have been achieved by this method.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1781185
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2004
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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