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  • 1
    Electronic Resource
    Electronic Resource
    1/f noise in metal–oxide–semiconductor transistors biased in weak inversion (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4192-4194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An approach to model 1/f noise in the weak inversion range of metal–oxide–semiconductor transistors (MOST) is proposed, based on Hooge's theory (mobility fluctuation model). Starting from conduction equations in the subthreshold regime, a method to evaluate the total number of carriers under the gate is presented and allows us to deduce the Hooge parameter αH. This model is applied to p-channel MOSTs. With the proposed model, the value of αH obtained in weak inversion is quite similar to this extracted in strong inversion allowing a unique description of the 1/f noise. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343517
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  • 2
    Electronic Resource
    Electronic Resource
    1/f noise modeling in long channel amorphous silicon thin film transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1983-1989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1/f noise investigations in thin film transistors with long channel and thin thickness of amorphous silicon film are presented. It is found that the noise behavior follows the mobility fluctuation model in ohmic and saturation regimes, whereas in the subthreshold conduction, a quadratic law versus the drain current is observed. The noise modeling is proposed taking into account the equations usually utilized for crystalline silicon metal–oxide–semiconductor field-effect transistors according to Hooge's theory. Moreover, the Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model is adapted to predict the noise levels. Two noise parameters have been extracted: The first is used in the subthreshold region, whereas we show that the second, directly related to Hooge's parameter, is adequate to describe alone the noise in normal conduction up to the saturation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372124
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  • 3
    Electronic Resource
    Electronic Resource
    Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3318-3323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction and low frequency channel noise of gallium–arsenide (GaAs) based pseudomorphic high electron mobility transistors are investigated. The following analysis takes into account both the noise source associated with the intrinsic part of the device and the sources located within the access path. In order to discriminate between these two noise origins, a model of the transistor conduction is proposed using only a few parameters which are easily extracted. It is shown that the intrinsic channel noise agrees with Hooge's model with αH parameter about 3×10−4 for the studied technology. Moreover, the values of the access resistances are an important parameter to describe correctly the conduction and the noise behaviors. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445494
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  • 4
    Electronic Resource
    Electronic Resource
    Conduction and 1/f noise analysis in amorphous silicon thin-film transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 923-928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction and low-frequency noise are analyzed in the channel of hydrogenated amorphous silicon (a-Si:H) thin-film transistors. 1/f noise expressions are proposed starting from a simple conduction model describing drain current in the ohmic range. Carrier fluctuations (ΔN model) and mobility fluctuations (Δμ model) are investigated. For long-channel transistors the conduction is quite similar to crystalline metal–oxide–semiconductor field-effect transistors but involving low mobility values. The 1/f noise behavior is analyzed by mobility fluctuations as predicted by Hooge's theory. For small channel transistors a crowding effect appears and access series resistances affect the conduction. The excess noise is then mainly controlled by these resistances when large gate voltages VGS are applied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360873
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  • 5
    Electronic Resource
    Electronic Resource
    1/f noise investigations in small channel length amorphous silicon thin film transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3660-3667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conduction and low-frequency noise are analyzed in hydrogenated amorphous thin film transistors with small channel length. From current–voltage characteristics a set of conduction parameters is extracted pointing out parasitic resistances in series with the active channel. The low-frequency noise behavior is studied by means of the small equivalent circuit of the device. Intrinsic channel noise is separated from access resistance noise. Channel noise variations versus device biases agree with Hooge's theory (carrier mobility fluctuations) but the noise levels are greater than in crystalline metal-oxide-semiconductor transistors. For high drain current 1/f noise in access series resistances prevails and becomes the main noise source. So, the results show the important part taken by these resistances in conduction and noise. Some comments for the design of thin film transistors are given. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366586
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