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  • 1
    Electronic Resource
    Electronic Resource
    Electronic properties of the hydrogen-carbon complex in crystalline silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2264-2271 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of hydrogen in carbon-doped n-type silicon have been studied using deep-level transient spectroscopy. It is demonstrated that hydrogen (H) in the presence of substitutional carbon (C) forms an H-C complex with an energy level located ≈0.16 eV below the edge of the conduction band. The H-C complex is a deep donor which is only stable in the positively charged state and dissociates after capture of free electrons for temperatures T≥300 K. The H-C dissociation kinetics yield an activation energy of 0.73 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351620
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  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance studies of GaAs containing a Si-δ-doping layer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4075-4079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of several n-type GaAs samples containing "δ-doping'' layers of Si have been studied using photoreflectance (PR) spectroscopy. Well-defined oscillatory features due to electronic transitions well above the band gap are observed at 300 K and identified as Franz–Keldysh oscillations. The energy spacing and the intensity of the oscillations decrease with decreasing temperature as a consequence, we believe, of changes in the electric field due to the surface charges. Self-consistent energy-band calculations support the interpretation that the oscillatory structure is due to Franz–Keldysh effects. The imposition of magnetic fields up to 15 even at room temperature has a pronounced influence on the PR spectrum. Parallel fields suppress the oscillatory structure but cause a large increase in the PR peaks near the GaAs energy gap. At 4.2 K Landau-like spectral features are observed for fields applied perpendicular to the doping layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348419
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  • 3
    Electronic Resource
    Electronic Resource
    Passivation of an anodic oxide/p-Si interface stimulated by electron injection (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4636-4642 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positive oxide charge (Qox) and the concentration of nonradiative recombination defects (Nit) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during electron injection. Qox and Nit decreased strongly due to electron injection. The observed effect is suggested to be inverse to the negative-bias-temperature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356431
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  • 4
    Electronic Resource
    Electronic Resource
    The temperature dependence of the absorption coefficient of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5978-5983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral behavior and the temperature dependence of the absorption coefficient of microporous silicon films are studied in the energy range of 1.2–3.8 eV, between 7 and 450 K. For photon energies above the direct band gap at 3.3 eV, the spectral behavior of the absorption coefficient is similar to that of crystalline silicon, and its absolute value is comparable to that estimated using Bruggeman effective medium approach. For lower energies the absorption coefficient is much reduced with respect to the effective medium model prediction. In this energy region, the absorption depends exponentially on the photon energy. From the temperature dependence of the absorption it is shown that this "Urbach tail''-like behavior is not due to absorption in surface states. In the range 300–400 K, the temperature dependence of the absorption coefficient of microporous and crystalline silicon is the same. This is a strong indication that phonon-assisted optical absorption takes place as expected from the indirect nature of crystalline silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363595
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  • 5
    Electronic Resource
    Electronic Resource
    Band alignment and carrier injection at the porous-silicon–crystalline-silicon interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4482-4488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage characteristics and the photoresponse of metal-porous Si–p-type Si heterostructures have been studied. It is shown that the common interpretation of the current-voltage characteristics, which assumes that the current is limited by the Schottky barrier at the metal-porous Si interface, is wrong. An alternative explanation based on the electric-field dependence of the porous Si conductivity is suggested. It is shown that the rectifying behavior originates from a depletion inside the c-Si substrate at its interface to the porous Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359443
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic structure of nanometer-thickness Si(001) film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3288-3294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tight-binding calculation of a Si film with nanometer dimensions is presented. We study the electron energy structure and the wave functions of a pristine Si-quantum film and one covered with hydrogen. A total energy minimization method, in the framework of self-consistent tight-binding theory, is used to investigate the reconstruction of the Si-surface after the adsorption of hydrogen. The dependence of the electron energy spectrum on the film thickness and the atomic structure of the surface is studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358683
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  • 7
    Electronic Resource
    Electronic Resource
    Stable nanostructuring of ultrathin porous silicon films by scanning tunneling microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2948-2953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capability of producing electronically induced modifications in ultrathin (∼20 nm) light-emitting porous silicon (PS) films by use of a scanning tunneling microscope (STM) operated in a high-vacuum environment is demonstrated. Upon increasing the tunnel current to 2 nA and the tunnel voltage beyond a threshold value of ∼7 V, structures 20–50 nm in width can be created to any desired pattern. These nanopatterns are stable at least for four days at room temperature. Experiments with both voltage polarities but equal power densities reveal that these structures can only be induced by directing the intense electron beam provided by the STM tip towards the sample surface, excluding pure thermal effects for the layer modifying process. These observations can be well explained by a model which includes a local increase in the density of defect states in deep-layer regions of the PS layer, which might be accompanied by a local quenching of the photo- or electroluminescence activity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361291
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  • 8
    Electronic Resource
    Electronic Resource
    Barrier lowering in dye-sensitized porous- TiO2 solar cells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1901-1903 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current–voltage characteristics of dye-sensitized porous-TiO2(por-TiO2) solar cells are investigated in the dark and under illumination at light intensities up to 1500 W/m2 and temperatures between −5 and 80 °C. In the dark, the barrier height and the ideality factor of the por-TiO2/electrolyte contact are 0.67 eV and 1.05, respectively. The very low effective Richardson constant indicates the importance of diffusion for transport. A current-dependent effective barrier height has been established under illumination of dye-sensitized por-TiO2 solar cells. The barrier lowering effect should be caused by the low neutralization rate of the positively charged dye radicals in the electrolyte. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122320
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  • 9
    Electronic Resource
    Electronic Resource
    Barrier tuning by means of a quantum, interface-induced dipole in a doping layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We consider a sharply defined doping layer near the interface of a heterostructure on the narrow-gap side. It is shown that an interface-induced dipole moment results, whose magnitude depends on the quantum spread of the electronic charge. The result of thermionic emission measurement of the barrier height is compared with a self-consistent, nonparabolic subband calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102245
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  • 10
    Electronic Resource
    Electronic Resource
    Hot-carrier light emission from silicon metal-oxide-semiconductor devices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2620-2622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light emitted from energetic electrons and holes near the drain region of Si field-effect transistor devices is measured spectrally resolved in the important energy range about the band gap. Using a sensitive Ge detector we examine the spectral range from 0.75 to 1.55 eV in order to identify and study the recombination of impact ionization generated electron-hole pairs. Two distinct recombination lines are observed superposed on a continuum background.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100177
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