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  • 1
    Electronic Resource
    Electronic Resource
    Magnetization and magnetic susceptibility of the diluted magnetic semiconductors Zn1−xCoxS and Zn1−xCoxSe : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6277-6279 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization measurements have been done at 1.5 K and magnetic fields up to 7 T by using extraction method on the samples with x=0.0055, 0.048, 0.063 for Zn1−xCoxS and x=0.0097, 0.030, 0.037, 0.042 for Zn1−xCoxSe. In both Co-based systems, the magnetization increases with x. A modified Brillouin function fits the data and the fitting parameters T0( (approximately-greater-than) 0) and Seff are obtained. These results reflect that there exists a strong antiferromagnetic interaction among Co++ ions and the antiferromagnetic interaction in Zn1−xCoxSe is stronger than that in Zn1−xCoxS. Magnetic susceptibility was measured in the temperature range 1.5 K≤T≤300 K by using a vibrating-sample magnetometer. The susceptibility displays a high-temperature Curie–Weiss behavior. From quantitative analysis we obtain the nearest-neighbor Co++–Co++ exchange integral constant J1/kB for sulfides and selenides to be −51±6 K and −57±8 K, respectively. This value is at least three times as large as that in their Mn-based counterparts, and we confirm that the antiferromagnetic interaction is stronger in Zn1−xCoxSe than in Zn1−xCoxS. By using our results in conjunction with a direct measurement of the nearest-neighbor exchange JNN from recent inelastic neutron scattering for Zn1−xCoxS, we obtain an estimate of the next-nearest-neighbor exchange constant J2/kB = −8 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349966
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  • 2
    Electronic Resource
    Electronic Resource
    Force measurement in a nanomachining instrument (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 4325-4329 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Two miniature, high sensitivity force transducers were employed to measure the thrust force along the in-feed direction and the cutting force along the cross-feed direction in a nanomachining instrument. The instrument was developed for conducting fundamental experiments of nanocutting especially on brittle materials. The force transducers of piezoelectric quartz type can measure machining forces ranging from 0.2 mN to 10 N. The submillinewton resolution makes it possible to measure the machining forces in the cutting experiments with depths of cut as small as the nanometer level. The stiffness and resonant frequency of the force transducers are 400 mN/nm and 300 kHz, respectively, which meet the specification of the instrument. A force transducer assembly is designed to provide a mechanism to adjust the preload on the force transducer and to decouple the measurement of forces. The assembly consists of three dual-axis circular flexures and a subframe. The axial stiffness of the flexures is designed to be greater than 6×107 N/m and the lateral stiffness of the flexures is designed to be 1×106 N/m to provide proper decoupling of forces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319976
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  • 3
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7094-7103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality In0.53Ga0.47As epilayers have been grown on semi-insulating (100) Fe-doped InP substrates. The growths were performed by liquid phase epitaxy (LPE) using rare-earth-doped melts in a graphite boat. The rare-earth elements studied were Yb, Gd and Er which act as gettering agents of impurities. Hall measurements show an elevated electron mobility for rare-earth-treated samples over undoped samples, μe=11 470 cm2/V s at 300 K and reduced carrier concentration (n-type), 9.33×1013 cm−3. The Hall results indicate an improvement in layer quality, but suggests that the treated layers are compensated. Photoluminescence (PL) studies show that the layers grown from rare-earth-doped melts have higher integrated PL efficiency with narrower PL linewidths than the undoped melt growths. The grown materials were fully characterized by Fourier transform infrared spectroscopy, double-crystal x-ray diffraction, energy dispersive spectroscopy, secondary-ion-mass spectroscopy, and deep level transient spectroscopy (DLTS). Compositional measurements reveal no measurable incorporation of rare-earth elements into the grown epilayers. DLTS measurements indicate the creation of two deep levels with rare-earth treatment, which is attributed to either the rare earth elements or impurities from within the rare-earth elements. Subsequent glow discharge mass spectrometry measurements reveal many impurities within the rare-earth elements which preferentially might lead to p-type doping centers and/or deep levels. Thus, rare-earth doping of LPE melts clearly improves epitaxial layer quality, however, the purity of commercially available rare-earth elements hinders optimal results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363721
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  • 4
    Electronic Resource
    Electronic Resource
    In0.53Ga0.47As metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1930-1932 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112820
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  • 5
    Electronic Resource
    Electronic Resource
    Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3471-3473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height was measured for five different materials on undoped In0.52Al0.48As grown by molecular beam epitaxy (MBE). Of the materials tested, two were transparent conductors, indium-tin-oxide (ITO), and cadmium tin oxide (CTO) and for comparison, three were opaque metals (Au, Ti, and Pt). The barrier heights were measured using I–V measurements. Due to the high series resistance created by the undoped In0.52Al0.48As, the Norde method [J. Appl. Phys. 50, 5052 (1979)] was used to plot the I–V characteristics and extract the Schottky barrier height. The Schottky barrier heights were determined to be 0.639, 0.637, 0.688, 0.640, and 0.623 eV for ITO, CTO, Au, Ti, and Pt, respectively. Previously published results for Schottky barriers on In0.52Al0.48As are compared with our measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113767
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  • 6
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    Determination of neutral temperature using fiber Bragg grating sensor in capacitively coupled argon plasmas (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-03-17
    Description: Neutral temperature T g in capacitively coupled argon plasmas was measured by using a fiber Bragg grating sensor. The measurement of T g is based on the thermal equilibrium process between the sensor and neutral gases, which is found to become fast upon increasing pressure, due to enhanced heat conduction. Additionally, T g was found to increase with increasing high frequency power due to enhancive collisions with charged particles. It is also observed that T g exhibits a significant gradient in space, ranging from 10 to 120 °C higher than room temperature for the conditions investigated. In addition, the spatial profiles of T g at different pressures generally resemble those of the Ar + density n i , measured with a floating double probe. The neutral gas is mainly heated via elastic collisions with ions in the sheath region followed by heat conduction among neutrals.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Trap-assisted large gain in Cu2O/C60 hybrid ultraviolet/visible photodetectors (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-04-23
    Description: Photomultiplication-type ultraviolet (UV)/visible photodetectors (PDs) are demonstrated in an electrodeposited Cu 2 O/C 60 hybrid structure. These simple organic/inorganic hybrid PDs exhibit external quantum efficiencies (EQEs) of 1.1 × 10 4 % under illumination of 365 nm UV light at −3 V, indicating a large gain of photocurrent for these devices. Such an EQE is one of the highest values among the reported organic/inorganic hybrid PDs at the same voltage. Cu 2 O and C 60 are found to play different roles in realizing the photomultiplication. Copper vacancies are proposed as the defects in the electrodeposited Cu 2 O layers, which can trap photogenerated holes. Such trapped holes will trigger the injection of multiple electrons and hence result in the photocurrent gain of the devices while C 60 primarily acts as a light absorption media to provide free holes.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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