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  • 1
    Electronic Resource
    Electronic Resource
    Coupled LO–plasmon modes in semi-insulating GaAs of ZnSe/GaAs heterojunctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1128-1135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy is used to investigate strong band bending at the interface in semi-insulating substrates of ZnSe/GaAs heterostructures grown at high epitaxy rates. Direct evidence is given of the enhancement of polar modes strength, on the substrate side, by the electric field of the space-charge zone associated with Fermi-level pinning. The latter is qualitatively analyzed by following band flattening under illumination through the evolution of interfacial coupled LO-phonon–plasmon modes. Corresponding Raman line shapes are discussed within the phenomenological approach of D. H. Hon and W. L. Faust [Appl. Phys. 1, 241 (1973)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362850
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  • 2
    Electronic Resource
    Electronic Resource
    Raman study of band bending at ZnSe/GaAs interfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1241-1248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Apparent p-type conductivity in nonintentionally doped ZnSe layers, grown at high temperature on semi-insulating GaAs substrates, is investigated by Raman spectroscopy. The microprobe technique provides direct evidence for carrier location on the GaAs side of the structures, close to the interface. Line-shape analysis of the coupled LO phonon-plasmon mode for different exciting wavelengths can be achieved, within the model of Hon and Faust [Appl. Phys. 1, 241 (1973)], only when incorporating plasma inhomogeneity. Electronic band bending at the junction in GaAs is deduced from the inferred carrier-density profile. Changes in Raman spectra under strong illumination are shown to proceed from the flattening of the bands through selective carrier photoinjection. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358925
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  • 3
    Electronic Resource
    Electronic Resource
    Comment on "Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by Raman spectroscopy'' [Appl. Phys. Lett. 62, 1800 (1993)] (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3236-3237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110209
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  • 4
    Electronic Resource
    Electronic Resource
    Raman study of ZnxBe1−xSe alloy (100) epitaxial layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 519-521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long wavelength longitudinal optical (LO) and transverse optical (TO) phonons of BeSe and ZnxBe1−xSe layers are identified in a wide composition range by using Raman spectroscopy. A two-mode behavior is clearly evidenced. As predicted by the dielectric model of Hon and Faust, the eigenfrequencies of the BeSe- and ZnSe-like LO modes correspond to the maxima of Im〈−cursive-epsilon(ω, x)−1〉. Excellent agreement is obtained with a model where the calculations are performed by using the equations of motion and polarization derived from the modified random element isodisplacement model. Besides, the TO and LO frequencies for BeSe are determined to be 501 and 579 cm−1, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127030
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  • 5
    Electronic Resource
    Electronic Resource
    Percolation behavior in the Raman spectra of ZnBeTe alloy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3081-3083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zone-center longitudinal (LO) and transverse (TO) optical phonons of Zn1−xBexTe epilayers are identified by Raman spectroscopy. On top of the expected BeTe- and ZnTe-like modes, which obey the modified-random-element-isodisplacement model, we observe an extra BeTe-like (TO, LO) doublet at intermediate x values. It has the same atypical characteristics as its BeSe-like counterpart in ZnBeSe alloy. Its activation validates our percolative picture for multimode description in Be–chalcogenide alloys that open the attractive class of mixed crystals with a sharp contrast in the bond stiffness. Also, the local modes of Be in ZnTe and of Zn in BeTe are identified at 411 cm−1 and 195 cm−1, respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467711
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  • 6
    Electronic Resource
    Electronic Resource
    Inhomogeneous electric field-induced Raman scattering at ZnSe/GaAs interfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2371-2376 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of inhomogeneous electric field-induced Raman scattering (IEFIRS) at ZnSe/GaAs interfaces is investigated. The consideration of the inhomogeneous character of the electric field brings additional conditions on top of those predicted by the microscopic and perturbative approaches. These conditions concern the relative orientations of (i) the wave vector of the vibrational modes in the matter, (ii) the direction of the electric field at the junction, and (iii) the gradient vector of the electric field magnitude in the space charge regions. As latter vector has opposite directions in the layer and the substrate, IEFIRS is only observed from one side of the junction for a given scattering geometry. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369552
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  • 7
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    Near-forward Raman study of a phonon-polariton reinforcement regime in the Zn(Se,S) alloy (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-28
    Description: We investigate by near-forward Raman scattering a presumed reinforcement of the (A-C,B-C)-mixed phonon-polariton of a A 1-x B x C zincblende alloy when entering its longitudinal optical-like ( LO -like) regime near the Brillouin zone centre Γ, as predicted within the formalism of the linear dielectric response. A choice system to address such issue is ZnSe 0.68 S 0.32 due to the moderate dispersion of its refractive index in the visible range, a sine qua non condition to bring the phonon-polariton insight near Γ. The LO- like reinforcement regime is actually accessed by using the 633.0 nm laser excitation, testified by the strong emergence of the (Zn-Se,Zn-S)-mixed phonon-polariton at ultimately small scattering angles.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Near-forward Raman selection rules for the phonon-polariton in (Zn, Be)Se alloys (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-11-10
    Description: The Raman selection rules of the (Zn-Se, Be-Se)-mixed phonon-polariton ( P P ) created by “alloying” in the three-mode [1 × (Zn-Se), 2 × (Be-Se)] Zn 1−x Be x Se system, whose dramatic S-like dispersion (∼200 cm −1 ) covers the large frequency gap between the Zn-Se and Be-Se spectral ranges, are studied in its wave vector ( q ) dependence by near-forward Raman scattering. Both the “collapse” regime away from the Γ point (q = 0) and the “reinforcement” regime near Γ are addressed, using appropriate laser lines and Be contents. We find that in both regimes the considered P P , in fact a transverse mode with the mixed mechanical-electrical character, obeys the same nominal Raman selection rules as its purely mechanical variant observed in the standard backscattering geometry. The discussion is supported by contour modeling of the multi- P P Raman lineshapes in their q -dependence within the linear dielectric approach.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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