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  • AIP Publishing  (2)
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  • AIP Publishing  (2)
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  • 1
    Online Resource
    Online Resource
    Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors
    AIP Publishing ; 2019
    In:  Journal of Applied Physics Vol. 126, No. 16 ( 2019-10-28)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 126, No. 16 ( 2019-10-28)
    Abstract: A physical insight into the capture and emission behavior of interface/oxide states in a GaN-based metal-oxide-semiconductor (MOS) structure is of great importance to understanding the threshold voltage (VTH) instability in GaN power transistors. A time-dependent VTH shift in Ni/Al2O3/AlGaN/GaN MOS-HFETs (heterojunction field-effect transistors) and a distribution of Al2O3/III-nitride interface states (Dit) were successfully characterized by constant-capacitance deep level transient spectroscopy. It is found that in situ remote plasma pretreatments in plasma-enhanced atomic-layer-deposition could suppress Dit (EC-ET  & gt; 0.4 eV) down to below 1.3 × 1012 cm−2 eV−1. Under high applied gate bias (e.g., VG  & gt; 8 V), tunnel filling of oxide states in the Al2O3 dielectric comes into play, contributing to remarkable VTH instability in the MOS-HFETs. The tunnel distance between the 2D Electron Gas (2DEG) channel and oxide states ET,ox in the Al2O3 dielectric decreases from 3.75 to 0.82 nm as VG increases from 2 to 8 V. A further increase of VG to 11 V makes the Fermi level approach ET,ox (EC  −  ET ∼ 1.62 eV), which may enable direct filling. High electric field induced tunnel filling of gate oxide states could be an assignable cause for VTH instability in normally-OFF III-nitride MOS-HFETs.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.5125825
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Interface charge engineering in down-scaled AlGaN (〈6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs
    AIP Publishing ; 2020
    In:  Applied Physics Letters Vol. 116, No. 10 ( 2020-03-09)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 116, No. 10 ( 2020-03-09)
    Abstract: The physical mechanism for recovery of 2D electron gas (2DEG) in down-scaled AlGaN/GaN heterostructures with SiNx layers grown by low-pressure chemical vapor deposition (LPCVD) was investigated by means of Hall-effect characterization, scanning Kelvin probe microscopy (SKPM), and self-consistent Poisson–Schrödinger calculations. Observations using SKPM show that the surface potential of the AlGaN/GaN heterostructure remained nearly unchanged (∼1.08 eV) as the thickness of the AlGaN barrier was reduced from 18.5 to 5.5 nm and likely originated from the surface pinning effect. This led to a significant depletion of 2DEG from 9.60 × 1012 to 1.53 × 1012 cm−2, as determined by Hall measurements, toward a normally OFF 2DEG channel. Based on a consistent solution of the Schrödinger–Poisson equations and analytical simulations, approximately 3.50 × 1013 cm−2 of positive fixed charges were confirmed to be induced by a 20-nm LPCVD-SiNx passivation over the AlGaN/GaN heterostructures. The interface charge exerted a strong modulation of band bending in the down-scaled AlGaN/GaN heterostructure, contributing to the efficient recovery of 2DEG charge density (∼1.63 × 1013 cm−2). E-mode ultrathin-barrier AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors with a low ON-resistance (RON), high ON/OFF current ratio, and steep subthreshold slope were implemented using LPCVD-SiNx passivation.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.5134886
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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