In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 22, No. 7R ( 1983-07-01), p. 1211-
Abstract:
The reactive-ion beam etching (R-IBE) characteristics of InP with Cl 2 , CCl 2 F 2 and CHF 3 have been studied. Some R-IBE characteristics of GaAs have also been studied. The etching rate for each gas has been determined as a function of ion energy, current density and angle of indidence. The highest etching rate, around 2000 Å/min, is obtained in Cl 2 -IBE, while the two other source gases yield an etching rate lower than that of Ar-IBE. In the case of CCl 2 F 2 -IBE, the addition of Ar is found to enhance the etching considerably. These IBE techniques are used to fabricate a grating structure with a period around 2500 A.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.22.1211
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1983
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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