In:
Journal of Applied Physics, AIP Publishing, Vol. 54, No. 1 ( 1983-01-01), p. 50-56
Abstract:
InGaAsP/InP double heterostructure lasers with buried rib waveguide structure in which p-quaternary rib waveguide layers surrounded by n-InP are formed adjacent to the active layers, are proposed for the 1.5–1.6 μm wavelength range and have been successfully fabricated by two-step liquid phase epitaxial methods combined with a controlled mesa etching technique. In this structure, the rib waveguide layer can provide carrier confinement as well as lateral optical confinement. The low threshold current of 50 mA was obtained with the external differential quantum efficiencies of about 42% and 36% under pulsed and cw operation, respectively. Stable fundamental transverse mode operation was achieved up to three times the threshold current, and single longitudinal mode cw operation was also observed up to 1.5 times threshold current.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1983
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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