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  • 1985-1989  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-in (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5084-5088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a technique for the fabrication of shallow, silicided n+−p and p+−n junctions with good electrical characteristics. The technique utilizes the ion implantation of dopants into silicide layers previously formed by ion-beam mixing with Si ions and low-temperature annealing, and the subsequent drive-in of implanted dopants into the Si substrate to form shallow junctions. This technique can be applied to the fabrication of metal-oxide-semiconductor field-effect transistor in a self-aligned fashion and can have a significant impact on complementary metal-oxide-semiconductor devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338333
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal processing on thermal oxides of silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3360-3363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in metal-oxide-semiconductor (MOS) devices have been studied. MOS capacitors have been analyzed by current-voltage (I-V) and constant current stress techniques. MOS field-effect transistors (MOSFETs) have been fabricated using RTP for the post-implant anneal, and the transistor degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at high temperature and/or long duration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337704
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Metal-oxide-semiconductor characteristics of rapid thermal nitrided thin oxides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1698-1700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of thin nitrided oxide (∼100 A(ring)) formed by rapid thermal nitridation (RTN) in pure NH3 have been studied. It is found that the current-voltage characteristic of RTN oxides follows a Fowler–Nordheim tunneling behavior with modifications caused by electron trapping processes at the oxide surface and interface. The trapping density is dependent on the RTN conditions. At the interface, both fixed charge (Nf) and interface state (Dit) densities exhibit turnaround phenomena when the RTN process proceeds. The maximum values of Nf and Dit at the turnaround points are lower for the higher temperature RTN, suggesting a viscous flow related strain relieving mechanism associated with RTN of thin oxides. Films with superior endurance behavior (QBD=20.4 C/cm2 compared with QBD=5.1 C/cm2 of thermal oxide under 10 mA/cm2 constant current stress) have been obtained by RTN at 1000 °C, 10 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99710
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1684-1686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow silicided p+/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive-in of the implanted boron into the Si substrate by rapid thermal annealing (RTA). Results of boron diffusion in titanium disilicide layer, its segregation at both silicide/Si and oxide/silicide interfaces, and the junction quality are presented. The precipitation of boron at the SiO2/TiSi2 interface is identified for the first time in the form of B2O3. p+/n diodes and short-channel metal-oxide-semiconductor field-effect transistors with good electrical characteristics have been fabricated using doped silicide technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101432
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Silicon epitaxial growth by rapid thermal processing chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1775-1777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality thin silicon epitaxial films have been grown on heavily doped p+ substrates using rapid thermal processing chemical vapor deposition with superior thickness and dopant profile control. The epitaxial growth kinetics have been studied by examining the dependence of growth rate on the deposition temperature, the volume percentage of SiH2Cl2, and the total gas flow rate. Submicron epitaxial layers with hyperabrupt dopant transition (〈200 A(ring)/decade) and excellent crystalline perfection with low defect density have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101288
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Suppression of lateral Ti silicide growth by ion beam mixing and rapid thermal annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 877-879 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the most important issues in the self-aligned silicide technology has been lateral silicide formation over the sidewall oxide spacers. In this work, the lateral silicide growth has been considerably suppressed by the use of ion beam mixing and rapid thermal annealing. Metal-oxide-semiconductor transistors fabricated using this technology show good electrical characteristics with negligible conduction between gate and source/drain electrodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99643
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    In vitro regeneration of plantlets in Fagraea fragrans Roxb. — a tropical tree (1986)
    Springer
    Plant cell, tissue and organ culture 7 (1986), S. 43-51 
    Details
    ISSN: 1573-5044
    Keywords: Fagraea fragrans ; nodal segment ; multiple shoots ; BA ; 2,4-D
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Different vegetative parts of Fagraea fragrans Roxb., a valuable timber tree of South East Asia, were used as explants in in vitro studies. Nodal segments showed the best growth response as numerous adventitious shoots were regenerated in MS medium supplemented with Benzyl adenine (BA, 8.8 um) and 2,4-dichlorophenoxyacetic acid (2,4-D, 0.5 um). Shoot buds also developed from the leaf and root segments that were subcultured. The detailed process of callus growth and differentiation leading to the formation of whole plantlets is described. Uniform plantlets obtained could be transplanted successfully in soil.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00043920
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    Paper (German National Licenses)
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