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  • 1
    Online Resource
    Online Resource
    Vienna :Springer Wien,
    Keywords: Poliovirus. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (603 pages)
    Edition: 1st ed.
    ISBN: 9783709170007
    DDC: 576/.6484
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1564-1566 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We consider a sharply defined doping layer near the interface of a heterostructure on the narrow-gap side. It is shown that an interface-induced dipole moment results, whose magnitude depends on the quantum spread of the electronic charge. The result of thermionic emission measurement of the barrier height is compared with a self-consistent, nonparabolic subband calculation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2620-2622 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light emitted from energetic electrons and holes near the drain region of Si field-effect transistor devices is measured spectrally resolved in the important energy range about the band gap. Using a sensitive Ge detector we examine the spectral range from 0.75 to 1.55 eV in order to identify and study the recombination of impact ionization generated electron-hole pairs. Two distinct recombination lines are observed superposed on a continuum background.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 561-563 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a pulsed microwave source to provide a strong lateral electric field in a Si-metal-oxide-semiconductor structure, we observe interface degradation by hot holes. Damage occurs in a two-step process. Holes are trapped in the oxide at low temperature and are subsequently converted into interface states in an annealing step at room temperature.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5051-5054 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of deep traps in the depletion regions of Schottky barrier junctions on silicon was made using deep level transient spectroscopy (DLTS). The Si samples, which had different carbon contents (C), were exposed to several annealing processes. The measurements show that depending on the C concentration and the annealing process employed C-induced deep traps with activation energies of 355, 290, and 216 meV appear above the valence band. The density, the trap levels, and the capture cross sections of these C-induced traps were determined from the DLTS data. The deep trap densities are correlated with the behavior of the diffusion length of the minority carriers in the different Si materials.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper is concerned with the characteristics of the two-dimensional electron gas (2DEG) at modulation-doped GaInAs/InP and GaInAsP/InP heterojunctions and GaInAs/InP single-quantum-well structures grown by low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) at 20 hPa. Using trimethyl-In, trimethyl-Ga, AsH3, and PH3 as source materials, this process permits the deposition of very uniform films with abrupt interfaces and doping profiles. We give the first detailed analysis of modulation-doped structures by classical Hall effect, Shubnikov–de Haas, and quantum Hall-effect measurements. Study of the scattering mechanisms of the 2DEG in modulation-doped GaInAs/InP and GaInAsP/InP structures reveals a small interface roughness and a low impurity content at the interfaces. Electron mobilities at 4.2 K up to 189 000 cm2/V s for a GaInAs/InP and 72 000 cm2/V s for a GaInAsP/InP heterojunction as well as values as high as 170 000 cm2/V s for a GaInAs/InP quantum well structure demonstrate the excellent control of the growth process and the quality of the material attainable by LP-MOVPE.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Hydrobiologia 122 (1985), S. 53-59 
    ISSN: 1573-5117
    Keywords: Rutilus rutilus (L.) ; Arrhenatherum sp. (rye grass) ; Tenebrio molitor larvae ; food consumption ; utilization ; production ; growth efficiency ; nitrogen excretion ; respiration ; energy budget
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Two to three year old roach (9–15 g body weight) were fed ad libitum with grass or with meal worms. After three weeks, both groups of fish showed a positive energy budget. However, with a grass diet, production was low (only 7% of that of meal worm feeding fish) with an increased of lipids, whereas the protein content of the body decreased. Non-crude fiber organic matter of grass was utilized to 47.6%, that of meal worms to 82.4%.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Graefe's archive for clinical and experimental ophthalmology 225 (1987), S. 226-234 
    ISSN: 1435-702X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract In the rat, continous exposure to so-called “cold light” of 800 lux leads to a nearly complete loss of retinal photoreceptors, which occurs within 4 weeks. This process is followed by vascularization of the retinal pigment epithelium (RPE). The origin, extent, and expansion of such proliferations within 6 months after the onset of irradiation were evaluated by means of light microscopy, transmission electron microscopy, scanning electron microscopy, corrosion cast preparation, india ink injection, and trypsin digest preparation. The vessels within the RPE were found to be fenestrated and to form a network with the vessels of the neurosensory retina. Invasion of Bruch's membrane and formation of chorioretinal anastomoses were not observed. The occurrence of vessels within the RPE coincided with a massive regression of capillaries in the neurosensory retina.
    Type of Medium: Electronic Resource
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