In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 3R ( 2001-03-01), p. 1388-
Abstract:
The Pb(Zr 0.52 Ti 0.48 )O 3 ferroelectric films with a c -axis oriented Bi 4 Ti 3 O 12 buffer layer were deposited on p-Si(100) substrate by pulsed laser deposition (PLD) technique. The Pb(Zr 0.52 Ti 0.48 )O 3 films were found to grow with a preferred orientation along (110) direction. Good ferroelectric properties were obtained for a 400 nm thick Pb(Zr 0.52 Ti 0.48 )O 3 /Bi 4 Ti 3 O 12 film system with Au electrodes: P r and E c were 20 µC/cm 2 and 48 kV/cm respectively. The memory window of capacitance–voltage ( C – V ) charactristics enlarged obviously and the current density reduced nearly two orders of magnitude after introducing the BIT buffer layer. The decay in remnant polarization was only 10% up to at least 10 9 bipolar switching cycles.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.1388
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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