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  • 1
    Online Resource
    Online Resource
    Defective Lithium Manganospinel Films with Excellent Electrochemical Characteristics
    The Electrochemical Society ; 2002
    In:  Electrochemical and Solid-State Letters Vol. 5, No. 9 ( 2002), p. A198-
    Details
    In: Electrochemical and Solid-State Letters, The Electrochemical Society, Vol. 5, No. 9 ( 2002), p. A198-
    Type of Medium: Online Resource
    ISSN: 1099-0062
    URL: Article
    DOI: 10.1149/1.1496537
    Language: English
    Publisher: The Electrochemical Society
    Publication Date: 2002
    detail.hit.zdb_id: 1483551-4
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  • 2
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    Synthesis and Processing of High Capacity, High Cycle life and High Discharge Rate Defective Manganospinel films for Rechargeable batteries
    Springer Science and Business Media LLC ; 2002
    In:  MRS Proceedings Vol. 730 ( 2002)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 730 ( 2002)
    Abstract: Significant effort to develop a robust rechargeable battery has been put in the past two decades. The efforts were mainly focused on developing rechargeable battery systems which exhibit high capacity, long cycle life and high discharge rate capabilities. LiMn 2 O 4 based cathodes have been researched extensively as they are not only economical but also environmentally desirable. Research includes composition and doping variation, formation of novel phases and microstructural tailoring, but none of the material modifications have successfully satisfied all the above mentioned performance criteria. In this paper we show a correlation between processing parameters, microstructure and electrochemical performance of Li-Mn-O cathode films. In addition we discuss the formation of metastable oxygen-rich lithium manganospinels, using a unique ultraviolet assisted deposition process. These defective films exhibit high capacity ( 〉 230 mAh/gm), long cycle life (less than 0.05 % capacity loss per cycle for the first 700 cycles), and high discharge rates ( 〉 25 C for 25 % capacity loss). The long cycle life and high capacity was attributed to the ability to cycle the Mn + valence to less than 3.5 without onset of Jahn-Teller structural transformation, while the high discharge rate was attributed to the extremely high diffusivity of Li + in the defective Li 1-δ Mn 2-2δ O 4 phase.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-730-V1.12
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2002
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  • 3
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    Online Resource
    Low-temperature resistivity minima in colossal magnetoresistive La 0.7 Ca 0.3 MnO 3 thin films
    American Physical Society (APS) ; 2002
    In:  Physical Review B Vol. 65, No. 9 ( 2002-2-5)
    Details
    In: Physical Review B, American Physical Society (APS), Vol. 65, No. 9 ( 2002-2-5)
    Type of Medium: Online Resource
    ISSN: 0163-1829 , 1095-3795
    URL: Article
    DOI: 10.1103/PhysRevB.65.094407
    RVK:
    UA 6500.3.B
    Language: English
    Publisher: American Physical Society (APS)
    Publication Date: 2002
    detail.hit.zdb_id: 2844160-6
    detail.hit.zdb_id: 209770-9
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  • 4
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    Online Resource
    Improved magnetic properties of self-assembled epitaxial nickel nanocrystallites in thin-film ceramic matrix
    Springer Science and Business Media LLC ; 2002
    In:  Journal of Materials Research Vol. 17, No. 4 ( 2002-04), p. 738-742
    Details
    In: Journal of Materials Research, Springer Science and Business Media LLC, Vol. 17, No. 4 ( 2002-04), p. 738-742
    Abstract: Nanocrystalline nickel particles were embedded in amorphous alumina and crystalline TiN matrices using a pulsed laser deposition process to investigate the effect of texturing on magnetic properties of nickel nanocrystallites. The crystalline quality of both the matrix and magnetic particles was investigated by cross-sectional high-resolution transmission electron microscopy. The embedded Ni nanocrystals were found to be epitaxial in the case of the TiN matrix and polycrystalline in Al 2 O 3 amorphous matrix. The Ni nanocrystals on TiN/Si grow epitaxially because the TiN acting as a template grows epitaxially on Si substrate via domain epitaxy. On the other hand, Ni nanocrystals in the Al 2 O 3 matrix are polycrystalline because of the amorphous nature of the alumina matrix. Magnetization versus temperature measurements have shown that the blocking temperature, above which the samples lose magnetization–field (M–H) hysteretic behavior, of the Ni–TiN sample (approximately 190 K) is significantly higher than that of Ni–Al 2 O 3 sample (approximately 30 K) with a similar size distribution of embedded magnetic particles. A comparison of the values of coercivity (H c ) of the two samples, measured from M–H data, indicates that epitaxial Ni nanocrystals also exhibit significantly higher coercivity than polycrystalline Ni particles in amorphous alumina matrix. The high values of TB and Hc of Ni–TiN samples with respect to TB of N–A1 2 O 3 samples are believed to be associated with preferred alignment of nanocrystallites.
    Type of Medium: Online Resource
    ISSN: 0884-2914 , 2044-5326
    URL: Article
    DOI: 10.1557/JMR.2002.0107
    RVK:
    VA 5350
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2002
    detail.hit.zdb_id: 54876-5
    detail.hit.zdb_id: 2015297-8
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  • 5
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    Online Resource
    Magnetic properties of self-assembled nanoscale La2/3Ca1/3MnO3 particles in an alumina matrix
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 79, No. 9 ( 2001-08-27), p. 1327-1329
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 79, No. 9 ( 2001-08-27), p. 1327-1329
    Abstract: We have investigated the processing and properties of La2/3Ca1/3MnO3 self-assembled nanodots formed in a nonmagnetic alumina matrix, which were produced by a pulsed-laser deposition process. The size of the nanodots was found to be in the range of 10–15 nm using high-resolution transmission electron microcopy. The average interlayer separation between two dots has been found to be 2–5 nm, which is sufficient to decouple the magnetic grains. The decoupling of the grains is supported by the zero-field-cooled and field-cooled magnetization (M) data. The coercivity of the La2/3Ca1/3MnO3 nanodots has been measured using magnetization measurements as a function of field (H) at different temperatures above and below the blocking temperature of the samples. The coercivity is found to vary from 600 Oe at 10 K to 400 and 200 Oe at 20 and 50 K, respectively. Above the blocking temperature, the sample is found to transform to a superparamagnetic magnetic state, resulting in the disappearance of any hysteresis in the M–H loops.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1399001
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    Structural and magnetoresistance properties of La2/3Ca1/3MnO3 thin films on buffered silicon substrates
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 78, No. 8 ( 2001-02-19), p. 1098-1100
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 78, No. 8 ( 2001-02-19), p. 1098-1100
    Abstract: We report an epitaxial growth of LCMO (La2/3Ca1/3MnO3) film on Si by using a highly conducting diffusion barrier layer of TiN. In order to achieve epitaxial growth of LCMO films, MgO, and SrTiO3 films were used as intermediate layers between LCMO and TiN layers. The results have indicated that the properties of LCMO films on Si substrates, deposited under an optimized condition, are on par with the properties of LCMO films on conventional oxide substrates such as LaAlO3 and SrTiO3 in terms of paramagnetic to ferromagnetic transition temperature, insulator to metal transition temperature, and magnetoresistance ratio.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1350603
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
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    Online Resource
    Growth and properties of Co-doped TiO2 thin films grown on buffered Si substrate
    AIP Publishing ; 2004
    In:  Journal of Applied Physics Vol. 95, No. 11 ( 2004-06-01), p. 7192-7194
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 95, No. 11 ( 2004-06-01), p. 7192-7194
    Abstract: Epitaxial growth of a Co-doped anatase TiO2 thin film on silicon has been achieved by using SrTiO3/TiN bilayers as a buffer. All layers were sequentially formed by pulsed laser deposition. X-ray φ scan and selective area electron diffraction patterns revealed that SrTiO3/TiN buffer layers were grown with a cube-on-cube orientation relationship with silicon. Ferromagnetism was observed at room temperature with a coercivity of around 607 Oe. However, the ferromagnetism is attributed to the highly cobalt enriched TiO2 clusters which nucleate after a certain growth of film, as observed by atomic/magnetic force microscopy as well as cross-sectional transmission electron microscopy.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.1651799
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2004
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 8
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    Online Resource
    Microstructural Study of Ultraviolet-Assisted Pulse Laser depoisted Indium Tin Oxide Films
    Springer Science and Business Media LLC ; 2002
    In:  MRS Proceedings Vol. 721 ( 2002)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 721 ( 2002)
    Abstract: Indium tin oxide is one of the most used transparent conducting oxides. In order to reduce the processing thermal budget and enhance compatibility of these films for such applications as transparent electrodes for solar cells and flat panel displays, lower deposition temperatures are desirable. The addition of a non-thermal energy source during deposition, in this case, a mercury lamp, has the ability to lower the required substrate temperature during processing while increasing the oxygen content of the deposited film through the added contribution of ionized species into the deposited material. We investigated the microstructure of UV-assisted pulsed laser deposited indium tin oxide films. Comparisons between the UV and non-UV films were made in order to judge the effectiveness of the UV radiation in achieving desirable properties.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-721-J6.3
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2002
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  • 9
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    Online Resource
    Fundamental Studies on the Mechanisms of Oxide CMP
    Springer Science and Business Media LLC ; 2000
    In:  MRS Proceedings Vol. 613 ( 2000)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 613 ( 2000)
    Abstract: In this paper, results of studies on the addition of salt to a polishing slurry, in terms of its effect on slurry stability, SiO 2 polishing rate and surface roughness of the polished surface are presented. Three salts, viz. LiCl, NaCl and KCl were selected, and three concentrations were tested. Polishing rate measurements using these slurries show that adding salt leads to increased removal rate without affecting surface roughness significantly. Based on these results, we can say that the agglomerates formed by adding salt to the slurry are fairly soft and easily broken during the polishing process. In addition, turbidity and particle size measurements show that significant coagulation of the particles in the slurry occurs only at the highest salt concentration, and is fastest for LiCl and NaCl, with KCl showing the slowest coagulation. From these results, it can be concluded that the enhancement in polish rate is due to increased contact at the wafer-pad-slurry interface, and not due to formation of larger agglomerated particles in the slurry. This is because of reduced electrostatic repulsion between these three surfaces, due to the screening of their negative surface charge by the metal ions in solution, resulting in a higher wear rate.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-613-E1.7.1
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2000
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  • 10
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    Online Resource
    Oxygen Content And Crystallinity Effects in Pulsed Laser Deposited Lanthanum Manganite Thin Films
    Springer Science and Business Media LLC ; 2000
    In:  MRS Proceedings Vol. 617 ( 2000)
    Details
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 617 ( 2000)
    Abstract: Eventhough colossal magnetoresistance in Lanthanum calcium manganite (LCMO) thin films was known for a long time, the effect of oxygen content and crystallinity on the properties of these films is not clearly understood. It is in this context that we have performed a systematic study of these effects by annealing the films in various ambients. A series of LCMO thin films have been grown in situ on (100) LaAlO 3 substrates using a pulsed laser deposition technique under identical conditions. Microstructural characterization carried out on these films has shown that the films are smooth, single phase and highly textured. The films were subjected to the following post deposition treatments: (i) annealing in oxygen at 900°C for 4 hrs, (ii) annealing in argon at 900°C for 4 hrs, (iii) annealing in oxygen at 500°C for 12 hrs, (iv) annealing in argon for 12 hrs and (v) annealing in vacuum at 850°C for half-an-hour. As deposited LCMO films show a transition temperature of 260 K and a magnetoresistance ratio (defined as [R(0)−R(H)/R(H)]) of 190% at 260 K in 5T magnetic field. The samples subjected to 500°C oxygen and Ar anneal have shown no change in the transition temperature and MR ratio. The films subjected to a 900°C annealing in Ar ambient have shown marginal improvement in transition temperature but a drastic improvement in the MR ratio (525%). 900°C oxygen annealed films have shown an improvement in the transition temperature (290 K) and MR ratio (225%) over as deposited films. Vacuum annealed samples have shown deteriorated properties. These results indicate that the metal-insulator transition is related to the oxygen content of the films while the MR ratio is related to the domain size.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    URL: Article
    DOI: 10.1557/PROC-617-J3.14
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2000
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