In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 21, No. 4 ( 2003-07-01), p. 979-982
Abstract:
The highly c-oriented ZnO films were epitaxially grown on n-type Si (111) substrate at the temperature range of 340–460 °C using the low-pressure metalorganic chemical vapor deposition method. All films exhibit a pronounced (002) peak for ZnO, indicative of the strong c-axis oriented characteristic. The ZnO film grown at 400 °C shows the best structural quality along with the largest lateral grain size, well supported by the narrowest full width at half maximum of ZnO (002) peak about 0.19° in x-ray diffraction. However, the temperature dependence of the vibrational modes at 436 and ∼563 cm−1 in Raman spectra revealed a low density of oxygen vacancies in the films grown at low temperatures, which is supposed to determine the photoluminescence (PL) properties. At low temperatures, the narrow ultraviolet (UV) near band emission dominated the PL spectrum with a very weak low energy tail near the band. High temperature (up to 460 °C) would cause serious oxygen deficiency, resulting in the weak broad UV band with obvious blue band emission.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2003
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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