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  • 2015-2019  (28)
  • 1985-1989  (77)
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  • 1
    Online Resource
    Online Resource
    Oxford :Taylor & Francis Group,
    Keywords: Space and time. ; Electronic books.
    Description / Table of Contents: Originally published in 1980. The author's arguments here provide grounds for rejecting both the absolutist and the relativist theories of time and presents two new theories, shifting the traditional debate to a consideration of time as a theoretical structure and theoretical framework.
    Type of Medium: Online Resource
    Pages: 1 online resource (277 pages)
    Edition: 1st ed.
    ISBN: 9780429671838
    Series Statement: Routledge Library Editions: Philosophy of Time Series
    DDC: 115
    Language: English
    Note: Cover -- Half Title -- Title Page -- Copyright Page -- Original Title Page -- Original Copyright Page -- Dedication Page -- Contents -- Preface -- I The Nature of Time -- 1 What is Time? -- 2 The Intractability of Time -- 3 Things in Time and Temporal Items -- 4 Reductionism -- 5 Platonism -- 6 A Plan of the Work -- II Time and Change -- 1 Reductionism and Aristotle's Principle -- 2 Changes -- 3 Inconceivability and Verification -- 4 Towards Changeless Time -- 5 Quantized Change -- 6 Date Causality -- 7 Duration Causality -- 8 Spatial Vacua and Reductionist Theories of Space -- 9 A Comparison of Temporal and Spatial Vacua -- 10 Temporal Vacua and Modalities -- III The Topology of Time I: The Linearity of Time -- I The Standard Topology -- 2 Cyclical Time and Closed Time -- 3 A Maximal Exposition of the Hypothesis of Closed Time -- 4 The Underdetermination of Theory by Data -- 5 Reductionism, Platonism and Closed Time -- IV The Topology of Time II: The Unity of Time -- 1 Space, Time and Unity -- 2 Non-unified Space -- 3 Non-unified Space and Non-unified Time -- 4 The Essentially Temporal Character of Evidence -- 5 Unified Space and Non-unified Time? -- V The Topology of Time III: The Beginning of Time -- 1 Beginnings and Endings -- 2 Aristotle, Swinburne and Tenses -- 3 Kant, Indefinite Extrapolation and Possibility -- 4 Empty Time, Leibniz and Explanation -- 5 Aristotle's Principle, Empty Time and the Beginning of the Universe -- VI The Topology of Time IV: The Micro-aspects -- 1 The Micro-structure of Time -- 2 Discrete Time -- 3 The Empirical Significance of Continuity Postulates -- 4 The Points of Time -- 5 The Russellian Construction of Instants -- 6 Instants as Propositions -- 7 Instants as Parts of Durations -- 8 Intervals of Time -- VII The Metric of Time -- 1 Dates and Durations -- 2 The Metrication of Time -- 3 Clocks and Conventions. , 4 Choosing a Clock -- 5 Conventionalism -- 6 Objectivism -- 7 Platonism and Objectivism -- 8 Objectivism and Semantic Revisionism -- 9 Unmeasurable Time -- VIII The Special Theory of Relativity -- 1 The Special Theory of Relativity -- 2 The Lorentz Transformations -- 3 Consequences of the Lorentz Transformations -- (i) Relativization of Simultaneity and Platonism -- (ii) STR and the Topology of Time -- (iii) Quine and the STR -- 4 The Twins Paradox -- 5 Platonism, Reductionism and the Special Theory of Relativity -- IX The Direction of Time -- 1 The Criterion of Temporal Order -- 2 Memory and Temporal Order -- 3 Memories and Mories -- 4 Physical Correlates -- 5 Predicates and Relations without Physical Correlates -- X Towards a Positive Theory -- 1 What, then, is Time? -- 2 Platonism -- 3 Time as a Construction from Events -- 4 Time as a Logical Space -- 5 Time as a System of Non-empirical Abstract Objects -- 6 The Flexible Response Theory -- 7 The Facts of the Matter -- 8 Time as a Theoretical Structure -- 9 Time as a Theoretical Framework -- Appendix: Properties of Relations -- Notes -- Bibliography -- Index.
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  • 2
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    Unknown
    Oceans and Law of the Sea, United Nations
    In:  EPIC3The First Global Integrated Marine Assessment, Chapter 36G: Arctic Ocean, New York, Oceans and Law of the Sea, United Nations, 47 p., pp. 1-47
    Publication Date: 2016-03-13
    Repository Name: EPIC Alfred Wegener Institut
    Type: Inbook , peerRev
    Format: application/pdf
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  • 3
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    Unknown
    In:  EPIC3Rapp P -v Réun Cons int Explor Mer, 188, pp. 90-97
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , peerRev
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  • 4
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 569-575 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6610-6618 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Constant pressure molecular dynamics simulations have been made for a simple ionic model for crystalline potassium nitrate at several pressures and temperatures which span the known phase diagram. The nitrate ion was modeled as a rigid four-site entity with distributed charges and a quaternion algorithm was used to solve the rotational equations of motion. Several structural features of KNO3 are reproduced in the simulations. The 300 K, 0.1 GPa aragonite-like phase II of KNO3 has been reproduced although in the model it appears at a pressure between 1 and 2 GPa. The disordering of the nitrate orientations which occurs at high temperatures has also been observed. At 3 GPa the stable phase of the model is very similar to the recently characterized phase IV of KNO3. Spontaneous phase transitions in the simulations did not always produce well ordered structures and this appears to be a problem inherent in the method.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1769-1771 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth dependence of silicon donor passivation and reaction in hydrogenated GaAs is directly determined for the first time by using 1000 A(ring) layers of 1017 cm−3 Si-doped GaAs, buried at various depths in undoped GaAs. Low-frequency hydrogen plasma exposure for 30 min at 250 °C reduces the carrier density by only a factor of 3 in layers buried 3 μm deep, but by three orders of magnitude in layers buried 0.3 μm deep. Annealing at 400 °C for 5 min restores 100% of the original carrier density in the 3-μm-deep layer but only 73% in the 0.3-μm-deep layer. Plasma exposure and 400 °C annealing together do not improve the mobility in the molecular beam epitaxial samples at any depth. Hydrogen-related acceptors seen by photoluminescence account for these effects.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 640-642 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the imaging of dislocations and stacking faults in silicon wafers in a noncontact, nondestructive fashion using laser based modulated optical reflectance. By comparison with conventional wet decoration etching, we show that the sensitivity of the modulated optical reflectance method can resolve the difference between two types of dislocations.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2220-2222 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten contacts to Zn-doped In0.53Ga0.47As have been formed by rapid thermal processing. Contacts to layers with a Zn doping concentration of 5×1018 cm−3 were rectifying as sputter deposited as well as after heat treatments at temperatures lower than 450 °C. Higher processing temperatures caused a linear decrease of the contact resistivity values from 0.6 as deposited to 0.15 Ω mm after heating at 550 °C. Rapid thermal processing at these higher temperatures stimulated the Schottky-to-ohmic contact conversion with a minimum contact resistance value of 8.5×10−5 Ω cm2 and a sheet resistance value of 150 Ω/(D'Alembertian) as a result of heating at 600 °C for 30 s. By increasing the p-InGaAs doping level to 1×1019 cm−3, the specific resistance of this contact was dropped to the minimum of 7.5×10−6 Ω cm2 as a result of heating at 600 °C for 30 s. The W/p-In0.53Ga0.47As contact showed excellent thermal stability over the temperature range of 300–750 °C, with an abrupt and almost unreacted metal-semiconductor interface. Heating at temperatures of 800 °C or higher caused degradation of the contact. This was reflected by a distinct increase in the heterostructure sheet resistance as a result of the intensive interfacial reaction which took place at the contact, accompanied by outdiffusion of both In and As.
    Type of Medium: Electronic Resource
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