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  • Sabatini, R. L.  (3)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 1983
    In:  Applied Physics Letters Vol. 43, No. 11 ( 1983-12-01), p. 1045-1047
    In: Applied Physics Letters, AIP Publishing, Vol. 43, No. 11 ( 1983-12-01), p. 1045-1047
    Abstract: The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1983
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Cambridge University Press (CUP) ; 1983
    In:  Proceedings, annual meeting, Electron Microscopy Society of America Vol. 41 ( 1983-08), p. 158-159
    In: Proceedings, annual meeting, Electron Microscopy Society of America, Cambridge University Press (CUP), Vol. 41 ( 1983-08), p. 158-159
    Abstract: Hydrogenated amorphous SiC (a-SiC:H) is a promising new solar cell material. In constrast to structural studies of amorphous Si and amorphous C, studies of amorphous SiC are rare. The main features of the diffraction patterns of amorphous Silicon and amorphous Carbon are two diffuse halos which for Si correspond to interatomic distances of about 2.35 Å and 3.85 Å and for C to 1.50 Å and 2.50 Å. These distances are close to the nearest interatomic distances present in the crystalline form of the same elements. Using 120 KeV electrons, we observe two pronounced halos also for a-SiC:H, similar to what is observed for pure Si and pure C. Figure 1 shows diffraction patterns from a-SiC:H and for comparison from Si and C.
    Type of Medium: Online Resource
    ISSN: 0424-8201 , 2690-1315
    Language: English
    Publisher: Cambridge University Press (CUP)
    Publication Date: 1983
    SSG: 11
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  • 3
    Online Resource
    Online Resource
    Cambridge University Press (CUP) ; 1984
    In:  Proceedings, annual meeting, Electron Microscopy Society of America Vol. 42 ( 1984-08), p. 562-563
    In: Proceedings, annual meeting, Electron Microscopy Society of America, Cambridge University Press (CUP), Vol. 42 ( 1984-08), p. 562-563
    Abstract: Using a TEM equipped with an electron energy loss spectrometer (EELS) the plasmon energy, E p of a material can easily be determined for specimens of thickness up to a few thousand Å. This coincides with the film thicknesses encountered in thin film technology, e.g., amorphous solar cells. E p is to the first approximation proportional to the square root of the valence electron density, and is thus sensitive to the chemical composition and the density of a material. E p measurements using EELS have therefore the potential of being a convenient way of characterizing a material, as has been demonstrated for hydrogenated metals, and this could be particularly useful for amorphous materials where characterization techniques such as x-ray and electron diffraction are of limited value.
    Type of Medium: Online Resource
    ISSN: 0424-8201 , 2690-1315
    Language: English
    Publisher: Cambridge University Press (CUP)
    Publication Date: 1984
    SSG: 11
    Location Call Number Limitation Availability
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