In:
Journal of Applied Physics, AIP Publishing, Vol. 59, No. 6 ( 1986-03-15), p. 2168-2172
Abstract:
Doping-modulated amorphous silicon semiconducting films which exhibit the phenomenon of light-induced excess conductivity (LEC) have been made by silane glow discharge in a single-chamber system. This phenomenon shows a strong dependence on substrate temperature and process gas composition. The LEC effect decreases for very small and very large layer thickness. There also seems to be an optimum defect density for producing large effects.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1986
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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