In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 27, No. 2 ( 2009-03-01), p. 622-625
Abstract:
The transfer characteristics of amorphous indium zinc oxide thin-film transistors were investigated. The active layer in the bottom gate structure of the transistor was fabricated using room-temperature rf-magnetron sputtering. The device operated as an n-type enhancement mode exhibited a clear pinch-off behavior and an on/off ratio of ∼106. The field-effect mobility of 9.6cm2∕Vs and subthreshold slope of 0.3V∕decade were obtained. The positive threshold voltage shift was observed under the positive gate bias stress. The field-effect mobility and subthreshold slope remained nearly unchanged within the time of the gate bias stress. The time dependence of the threshold voltage shift was well matched with the stretched-exponential time dependence model.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2009
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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