In:
ECS Transactions, The Electrochemical Society, Vol. 16, No. 8 ( 2008-10-03), p. 369-376
Abstract:
This paper presents first results of fracture surface energies measurements performed in-situ during annealing of silicon wafers. The effect of wafer conditioning by atmospheric-pressure plasmas and subsequent chemical pretreatments was investigated. High surface energies are obtained at low annealing temperatures by plasma-treatment in oxygen and nitrogen mixtures without any post-treatment. The increase of surface energy during annealing of oxygen-plasma treated wafers is considerably accelerated by post-treatment with gaseous or aqueous ammonia. Aside from a catalytic effect of ammonia on siloxane formation, cationic bridging of bonding surfaces by ammonium must also be considered at low annealing temperatures.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2008
Permalink